The Fox Group Inc. Signs 2nd License for its Silicon Carbide patents

Montréal, CANADA, July 15, 2008 --- The Fox Group Inc. is pleased to announce the signing of a
second non-exclusive license agreement for patents related to silicon carbide. This license, to a US
corporation, follows on the license signed two months ago with a European company.

"Fox Group is pleased to sign a second license for key patents relating to silicon carbide," said Mr.
Barney O’Meara, President and CEO of Fox Group. "This license provides further validation of the
importance of our patents, especially for silicon carbide with a low level of micropipes and
dislocations.”

O’Meara continued, “We cannot divulge details of this second license agreement, except to say that
it is non-exclusive and includes sales-based royalties. We continue to offer rights to our IP portfolio to
silicon carbide manufacturers worldwide, and we expect to conclude further license agreements in
the near future.”

Low defect density silicon carbide is starting to be used in the production of top-performance power
semiconductor devices, such as MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes
for applications such as power control and correction (inverters, converters, etc.). While the RF,
optoelectronics, and detector markets can currently make do with higher defect levels, all silicon
carbide manufacturers are working to produce better and better material.

The silicon carbide-based electronic devices market is projected to exceed $1 Billion annually within
five years. Fox Group anticipates that eventually all silicon carbide will have low defect levels and
thus fall within the claims of Fox Group’s key patents on silicon carbide material.

About The Fox Group Inc.

Founded in 1999, Fox Group is a privately held US corporation with a wholly owned subsidiary in
Montreal, Canada, devoted to production of FoxUV™ LEDs having peak wavelengths of 350-365nm,
to replace mercury-containing UV lamps and to enable numerous new applications.

For further press information, please contact

The Fox Group Inc.
Mr. Barney O’Meara, President & CEO
Tel: (540) 987-8271
This e-mail address is being protected from spambots, you need JavaScript enabled to view it

The Fox Group Inc. Licenses Out its Silicon Carbide patents

Montréal, CANADA, May 9, 2008 --- The Fox Group Inc. is pleased to announce the signing of a nonexclusive license agreement with a European company for certain Fox Group patents related to silicon carbide and bulk growth of compound semiconductor crystals.

"With our focus on UV LEDs, Fox Group has discontinued product development in silicon carbide and has recently decided to offer rights to our silicon carbide-related patents," said Mr. Barney O’Meara, President and CEO of Fox Group. "Our scientists made significant R&D breakthroughs in the late 1990s that resulted in silicon carbide with no micropipes and very low defect density. Fox Group owns key patents covering low-defect single crystal silicon carbide material having less than a specific level of defects, that is, patents for the material itself, regardless of the method of manufacture or of
the equipment used.”

Dr. Heikki Helava, Fox Group’s CTO, added, “The silicon carbide industry has steadily improved the quality of commercially-available wafers so that the best silicon carbide now being sold appears to fall within the scope of these patents, as determined by independent testing.”

O’Meara continued, “We cannot divulge details of the license agreement, except to say that it is nonexclusive and includes sales-based royalties. We have been in contact with most silicon carbide manufacturers worldwide, and have met and discussed terms with more than half a dozen
companies. Several of them have inquired about an exclusive license or outright purchase of this patent portfolio. We expect to conclude further patent rights agreements in the near future.”

Low defect density silicon carbide is starting to be used in the production of top-performance power semiconductor devices, such as MOSFETs, HEMTs, JFETs, BJTs, and Schottky barrier and PIN diodes for applications such as power control and correction (inverters, converters, etc.). While the RF, optoelectronics, and detector markets can currently make do with higher defect levels, all silicon carbide manufacturers are working to produce better and better material.

O’Meara added “By the time the silicon carbide-based device market reaches $1 Billion annually – which is expected to occur within five years, for all applications combined – we believe that virtually all silicon carbide will be low defect and fall within the claims of our patents.”

About The Fox Group Inc.

Founded in 1999, Fox Group is a privately held US corporation with a wholly owned subsidiary in Montreal, Canada, devoted to production of FoxUV™ LEDs having peak wavelengths of 350-365nm, to replace mercury-containing UV lamps and to enable numerous new applications.

For further press information, please contact:

The Fox Group Inc.
Mr. Barney O’Meara, President & CEO
Tel: (540) 987-8271
This e-mail address is being protected from spambots, you need JavaScript enabled to view it

www.thefoxgroupinc.com or www.uvleds.com

Fox Group announces its new family of 350nm Ultraviolet LEDs
Deer Park, NY, July 10, 2006

The Fox Group, Inc. is pleased to announce the availability of its new 350nm UV LEDs. These LEDs,
which have a peak wavelength of 350nm, are now offered in several forms:

• Packaged lamps: 5mm (T1-3/4) clear, UV-resistant silicone,
  TO-18 can with glass ball lens or flat glass window,
  and PLCC-2 (3528) SMD
• 320 x 320 micron LED dies
• 2'' diameter epitaxial wafers

The FoxUV™ 350nm LEDs have a typical peak wavelength of 351nm (at 20mA) with FWHM spectral width of about 10nm. As with all Fox Group LEDs, the wavelength of these new UV LEDs is extremely consistent: typically +/- 1nm. The wavelength is also highly stable with changes in forward current. This exceptional consistency and stability is achieved with Fox Group's exclusive, proprietary, patented FoxHVPE™ epitaxy process, which features excellent uniformity.

These new, 350nm UV LEDs have an average output power of greater than 200 microwatts at 20mA at a forward voltage of approximately 4.5V, and a robust 500 microwatts at 50mA drive current.

In addition Fox Group's 350nm UV LEDs show exceptionally low rate of degradation, maintaining more than 70% of their initial output power after rigorous accelerated degradation testing at 30mA for more than 1100 hours.
Applications for FoxUV^TM 350nm LEDs include:

• Medical and biomedical applications; including blood serum analysis
• Sensors of materials with fluorescence response in 350-355nm range
• Fluorescence "disclosing" and specialized inspection lamps
• Scientific and other applications where absorption or response at 350-355nm is required

UV LEDs present a risk of eye damage because most of their radiation emission is invisible to humans (below ~ 380nm). Therefore users should take appropriate precautions, especially for applications by or near persons who would not be aware of the potential danger, and most especially for use near children and pets.

These new 350nm UV LEDs join Fox Group's present 360nm UV LEDs, which have similar advantages: highly consistent and stable wavelength, 0.8mW output power at 20mA, 4mW output power at 100mA, and an extremely low rate of degradation.
For further information or specifications, contact:

Barney O'Meara
President&CEO
The Fox Group, Inc.
Tel: (540) 987-8271
E-mail:  This e-mail address is being protected from spambots, you need JavaScript enabled to view it

Fox Group announces sales of 15mm diameter, epi-ready AlN substrates
Deer Park, NY, February 28, 2006

The Fox Group, Inc. has begun shipping limited quantities of monocrystalline, research-grade aluminum nitride (AlN) substrates. Initiallyavailable disks are sliced from boules grown by a proprietary, true-bulk crystal growth process, with one side polished to an epi-ready finish. Fox Group currently offers substrates that are 15mm diameter and approximately 0.5mm thick.
Applications for Fox Group's AlN substrates include ultraviolet (UV) and blue light emitting diodes and lasers, avalanche photodiodes and other sensors, power electronic devices, and UV-transparent windows and heat sinks.

Fox Group conducts its AlN development and bulk crystal growth activities at its laboratory in Deer Park, NY.
The Company also manufactures other compound semiconductor products for the consumer electronics and industrial markets, including UV, blue, and other color LEDs (light emitting diodes) by its proprietary and exclusive HVPE (hydride vapor phase epitaxy) technology at its facility in Montreal, Canada.